Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices

Emulation of neural networks by redox-based Resistive Random Access Memories (ReRAMs) with components such as thin films of ceramic materials are considered by the technological roadmap (ITRS) as a promising concept for the next generation non-volatile memory storage and as an important key towards...

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Bibliographic Details
Main Authors: Valov, Ilia (Author), Ielmini, Daniele (Author), Rupp, Jennifer L. M. (Author), Rupp, Jennifer Lilia Marguerite (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: Springer-Verlag, 2018-06-11T20:32:42Z.
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