High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects

High-Performance and Traditional Multicrystalline Silicon: Comparing Gettering Responses and Lifetime-Limiting Defects

In recent years, high-performance multicrystalline silicon (HPMC-Si) has emerged as an attractive alternative to traditional ingot-based multicrystalline silicon (mc-Si), with a similar cost structure but improved cell performance. Herein, we evaluate the gettering response of traditional mc-Si and...

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Bibliographic Details
Main Authors: Ekstrom, Kai E. (Author), Autruffe, Antoine (Author), Lai, Barry (Author), Stokkan, Gaute (Author), del Canizo, Carlos (Author), Castellanos, Sergio (Contributor), Jensen, Mallory Ann (Contributor), Morishige, Ashley Elizabeth (Contributor), Hofstetter, Jasmin (Contributor), Yen, Patricia (Contributor), Buonassisi, Anthony (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2018-11-06T18:04:09Z.
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