Exceeding 3 ms Minority Carrier Lifetime in n-type Non-contact Crucible Silicon

Exceeding 3 ms Minority Carrier Lifetime in n-type Non-contact Crucible Silicon

The presence of metal impurities and their interactions with structural defects (e.g., dislocations) are deleterious to the performance of Si-based solar cell devices. To achieve higher minority carrier lifetimes that translate into higher solar cell efficiencies, novel growth methods with low dislo...

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Bibliographic Details
Main Authors: Kivambe, Maulid (Author), Powell, Douglas M. (Author), Nakajima, Kazuo (Author), Morishita, Kohei (Author), Murai, Ryota (Author), Castellanos, Sergio (Contributor), Jensen, Mallory Ann (Contributor), Buonassisi, Anthony (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: Elsevier, 2018-11-07T18:57:37Z.
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