Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length....

Full description

Bibliographic Details
Main Authors: Vahanissi, Ville (Author), Liu, Zhengjun (Author), Huang, Haibing (Author), Magana, Ernesto (Author), Khelifati, Nabil (Author), Husein, Sebastian (Author), Lai, Barry (Author), Bouhafs, Djoudi (Author), Laine, Hannu (Contributor), Morishige, Ashley Elizabeth (Contributor), Bertoni, Mariana I (Contributor), Buonassisi, Anthony (Contributor), Fenning, David P (Contributor), Savin, Hele Irene (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2018-11-19T14:27:49Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items