|
|
|
|
LEADER |
02759 am a22004333u 4500 |
001 |
119178 |
042 |
|
|
|a dc
|
100 |
1 |
0 |
|a Vahanissi, Ville
|e author
|
100 |
1 |
0 |
|a Massachusetts Institute of Technology. Department of Mechanical Engineering
|e contributor
|
100 |
1 |
0 |
|a Laine, Hannu
|e contributor
|
100 |
1 |
0 |
|a Morishige, Ashley Elizabeth
|e contributor
|
100 |
1 |
0 |
|a Bertoni, Mariana I
|e contributor
|
100 |
1 |
0 |
|a Buonassisi, Anthony
|e contributor
|
100 |
1 |
0 |
|a Fenning, David P
|e contributor
|
100 |
1 |
0 |
|a Savin, Hele Irene
|e contributor
|
700 |
1 |
0 |
|a Liu, Zhengjun
|e author
|
700 |
1 |
0 |
|a Huang, Haibing
|e author
|
700 |
1 |
0 |
|a Magana, Ernesto
|e author
|
700 |
1 |
0 |
|a Khelifati, Nabil
|e author
|
700 |
1 |
0 |
|a Husein, Sebastian
|e author
|
700 |
1 |
0 |
|a Lai, Barry
|e author
|
700 |
1 |
0 |
|a Bouhafs, Djoudi
|e author
|
700 |
1 |
0 |
|a Laine, Hannu
|e author
|
700 |
1 |
0 |
|a Morishige, Ashley Elizabeth
|e author
|
700 |
1 |
0 |
|a Bertoni, Mariana I
|e author
|
700 |
1 |
0 |
|a Buonassisi, Anthony
|e author
|
700 |
1 |
0 |
|a Fenning, David P
|e author
|
700 |
1 |
0 |
|a Savin, Hele Irene
|e author
|
245 |
0 |
0 |
|a Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering
|
260 |
|
|
|b Institute of Electrical and Electronics Engineers (IEEE),
|c 2018-11-19T14:27:49Z.
|
856 |
|
|
|z Get fulltext
|u http://hdl.handle.net/1721.1/119178
|
520 |
|
|
|a Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.
|
520 |
|
|
|a United States. Department of Energy. Office of Basic Energy Sciences (Contract No. DE-AC02-06CH11357)
|
520 |
|
|
|a National Science Foundation (U.S.) (CA No. EEC-1041895)
|
520 |
|
|
|a Finnish Cultural Foundation
|
520 |
|
|
|a Fulbright-Technology Industries of Finland Grant
|
520 |
|
|
|a University of California, San Diego. Start Up Funds
|
655 |
7 |
|
|a Article
|
773 |
|
|
|t 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
|