Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers

Microscopic Distributions of Defect Luminescence From Subgrain Boundaries in Multicrystalline Silicon Wafers

We investigate the microscopic distributions of sub-band-gap luminescence emission (the so-called D-lines D1/D2/D3/D4) and the band-to-band luminescence intensity, near recombination-active subgrain boundaries in multicrystalline silicon wafers for solar cells. We find that the sub-band-gap luminesc...

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Bibliographic Details
Main Authors: Samundsett, Christian (Author), Sio, Hang C. (Author), Lai, Barry (Author), Li, Li (Author), Nguyen, Hieu T. (Contributor), Jensen, Mallory Ann (Contributor), Buonassisi, Anthony (Contributor), MacDonald, Daniel G (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Civil and Environmental Engineering (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2018-11-19T15:32:48Z.
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