Tuning Electronic Structure of Single Layer MoS₂ through Defect and Interface Engineering

Tuning Electronic Structure of Single Layer MoS₂ through Defect and Interface Engineering

Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS₂) has shown promising applications in electronics, photonics, energy, and electrochemistr...

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Main Authors: Yin, Kedi (Author), Ling, Xi (Contributor), Xue, Jianmin (Author), Chen, Yan (Contributor), Huang, Shengxi (Contributor), Ji, Xiang (Contributor), Adepalli, Kiran Kumar (Contributor), Wang, Xinwei (Contributor), Dresselhaus, Mildred (Contributor), Kong, Jing (Contributor), Yildiz, Bilge (Contributor)
Other Authors: Massachusetts Institute of Technology. Computer Science and Artificial Intelligence Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: American Chemical Society (ACS), 2019-02-11T16:08:44Z.
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