Calculating the band structure of 3C-SiC using sp[superscript 3]d[superscript 5]s* + ∆ model

We report on a semiempirical tight-binding model for 3C-SiC including the effect of sp[superscript 3]d[superscript 5]s* orbitals and spin-orbit coupling (∆). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater-Koster...

Full description

Bibliographic Details
Main Authors: Onen, Murat (Contributor), Turchetti, Marco (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems (Contributor)
Format: Article
Language:English
Published: Springer Berlin Heidelberg, 2019-03-18T19:35:37Z.
Subjects:
Online Access:Get fulltext