In Situ-Generated Volatile Precursor for CVD Growth of a Semimetallic 2D Dichalcogenide

In Situ-Generated Volatile Precursor for CVD Growth of a Semimetallic 2D Dichalcogenide

Semimetallic-layered transition-metal dichalcogenides, such as TiS2, can serve as a platform material for exploring novel physics modulated by dimensionality, as well as for developing versatile applications in electronics and thermoelectrics. However, controlled synthesis of ultrathin TiS2 in a dry...

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Main Authors: Gao, Zhenfei (Author), Ji, Qingqing (Author), Shen, Pin-Chun (Author), Han, Yimo (Author), Leong, Wei Sun (Author), Mao, Nannan (Author), Zhou, Lin (Author), Su, Cong (Author), Niu, Jin (Author), Ji, Xiang (Author), Goulamaly, Mahomed Mehdi (Author), Muller, David A. (Author), Li, Yongfeng (Author), Kong, Jing (Author)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor), Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor)
Format: Article
Language:English
Published: American Chemical Society (ACS), 2019-06-27T14:42:35Z.
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