Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides

Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides

Lateral heterostructures with planar integrity form the basis of two-dimensional (2D) electronics and optoelectronics. Here we report that, through a two-step chemical vapor deposition (CVD) process, high-quality lateral heterostructures can be constructed between metallic and semiconducting transit...

Full description

Bibliographic Details
Main Authors: Leong, Wei Sun (Author), Ji, Qingqing (Author), Mao, Nannan (Author), Wang, Haozhe (Author), Goodman, Aaron Jacob (Author), Vignon, Mikpongbeho Antoine (Author), Su, Cong (Author), Guo, Yunfan (Author), Shen, Pin-Chun (Author), Gao, Zhenfei (Author), Tisdale, William (Author), Muller, David A. (Author), Kong, Jing (Author)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor), Massachusetts Institute of Technology. Department of Chemistry (Contributor), Massachusetts Institute of Technology. Department of Chemical Engineering (Contributor), Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: American Chemical Society (ACS), 2019-07-10T18:12:43Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items