Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Scho...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Elsevier BV,
2019-11-06T16:02:38Z.
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| Subjects: | |
| Online Access: | Get fulltext |