Electronic Structure Origins of Surface-Dependent Growth in III-V Quantum Dots

Indium phosphide quantum dots (QDs) have emerged as a promising candidate to replace more toxic II-VI CdSe QDs, but production of high-quality III-V InP QDs with targeted properties requires a better understanding of their growth. We develop a first-principles-derived model that unifies InP QD forma...

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Bibliographic Details
Main Authors: Zhao, Qing (Author), Kulik, Heather J. (Author)
Other Authors: Massachusetts Institute of Technology. Department of Chemical Engineering (Contributor), Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: American Chemical Society (ACS), 2020-05-14T19:45:08Z.
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