A Diamond:H/WO3 Metal-Oxide-Semiconductor Field-Effect Transistor

A Diamond:H/WO3 Metal-Oxide-Semiconductor Field-Effect Transistor

A p-type Diamond:H/WO 3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO 2 as gate insulator, the Diamond:H/WO 3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low ga...

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Bibliographic Details
Main Authors: Yin, Zongyou (Author), Tordjman, Moshe (Author), Vardi, Alon (Author), Kalish, Rafi (Author), del Alamo, Jesus A (Author)
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2020-07-14T16:10:56Z.
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