Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress

Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress

The electrical degradation of InAlN/GaN high-electron-mobility transistors for millimeter-wave applications has been examined under simultaneous high V [subscript DS,stress] and high I[subscript Dstress] electrical stress. Besides a drain current decrease and a positive threshold voltage shift, the...

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Bibliographic Details
Main Authors: Wu, Yufei (Author), Sasangka, Wardhana A. (Author), del Alamo, Jesus A (Author)
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Singapore-MIT Alliance in Research and Technology (SMART) (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2020-07-14T19:37:15Z.
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