10-nm Fin-width InGaSb p-channel self-aligned FinFETs using antimonide-compatible digital etch

10-nm Fin-width InGaSb p-channel self-aligned FinFETs using antimonide-compatible digital etch

We have fabricated self-aligned InGaSb p-channel FinFETs using a novel antimonide-compatible digital etch. This is the first demonstration of digital etch on InGaSb-based transistors of any kind. It has enabled the first fabricated InGaSb FinFETs featuring fin widths down to 10 nm and gate lengths o...

Full description

Bibliographic Details
Main Authors: Lu, Wenjie (Author), Roh, I. P. (Author), Geum, D.-M (Author), Kim, S.-H (Author), Song, J. D. (Author), Kong, L. (Author), del Alamo, Jesus A (Author)
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2020-07-15T14:57:03Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items