Making Large‐Area Titanium Disulfide Films at Reduced Temperature by Balancing the Kinetics of Sulfurization and Roughening

The synthesis of large‐area TiS2 thin films is reported at temperatures as low as 500 °C using a scalable two‐step method of metal film deposition followed by sulfurization in an H2S gas furnace. It is demonstrated that the lowest‐achievable sulfurization temperature depends strongly on the oxygen b...

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Bibliographic Details
Main Authors: Li, Yifei (Author), Singh, Akshay k (Author), Reidy, Kate (Author), Jo, Seong Soon (Author), Ross, Frances Mary (Author), Jaramillo, Rafael (Author)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: Wiley, 2020-07-16T15:39:12Z.
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