Increased Phonon Scattering by Nanograins and Point Defects in Nanostructured Silicon with a Low Concentration of Germanium

Increased Phonon Scattering by Nanograins and Point Defects in Nanostructured Silicon with a Low Concentration of Germanium

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The mechanism for phonon scattering by nanostructures and by point defects in nanostructured silicon (Si) and the silicon germanium (Ge) alloy and their thermoelectric properties are investigated. We found that the thermal conductivity is reduced by a factor of 10 in nanostructured Si in comparison...

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Bibliographic Details
Main Authors: Zhu, G. H. (Author), Lan, Y. C. (Author), Wang, X. W. (Author), Joshi, G. (Author), Wang, D. Z. (Author), Yang, J. (Author), Vashaee, D. (Author), Guilbert, H. (Author), Pillitteri, A. (Author), Chen, Gang (Contributor), Ren, Z. F. (Author), Lee, H. (Contributor), Dresselhaus, Mildred (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2010-01-22T19:22:18Z.
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