Impact ionization in InSb probed by terahertz pump-terahertz probe spectroscopy

Impact ionization in InSb probed by terahertz pump-terahertz probe spectroscopy

Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below band gap broadband far-infrared radiation was investigated at 200 and 80 K. Using a THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of 100 MW/cm[superscript 2], we observed carrier heat...

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Main Authors: Hoffmann, Matthias C. (Contributor), Hebling, Janos (Author), Hwang, Harold Young (Contributor), Yeh, Ka-Lo (Contributor), Nelson, Keith Adam (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Chemistry (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2010-03-02T16:41:02Z.
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