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01651 am a22002773u 4500 |
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|a Hoffmann, Matthias C.
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|a Massachusetts Institute of Technology. Department of Chemistry
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|a Nelson, Keith Adam
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|a Hoffmann, Matthias C.
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|a Hwang, Harold Young
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|a Yeh, Ka-Lo
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|a Nelson, Keith Adam
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|a Hebling, Janos
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|a Hwang, Harold Young
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|a Yeh, Ka-Lo
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|a Nelson, Keith Adam
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|a Impact ionization in InSb probed by terahertz pump-terahertz probe spectroscopy
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|b American Physical Society,
|c 2010-03-02T16:41:02Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/51883
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|a Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below band gap broadband far-infrared radiation was investigated at 200 and 80 K. Using a THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of 100 MW/cm[superscript 2], we observed carrier heating and impact ionization dynamics. The number of carriers produced exceeds 10[superscript 16] cm[superscript −3], corresponding to a change in carrier density ΔN/N of 700% at 80 K. The onset of a well-defined absorption peak at 1.2 THz is an indication of changes in longitudinal optical (LO) and longitudinal acoustic (LA) phonon populations due to cooling of the hot electrons.
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|a Office of Naval Research
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|a Article
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|t Physical Review B
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