A Simple Semiempirical Short-Channel MOSFET Current-Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters
A simple semiempirical model I[subscript D](V[subscript GS], V[subscript DS]) for short-channel MOSFETs applicable in all regions of device operation is presented. The model is based on the so-called ldquotop-of-the-barrier-transportrdquo model, and we refer to it as the ldquovirtual sourcerdquo (VS...
| Main Authors: | , , |
|---|---|
| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2010-03-08T15:21:14Z.
|
| Subjects: | |
| Online Access: | Get fulltext |