Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs
Hole mobility and velocity are extracted from scaled strained-Si[subscript 0.4]5Ge[subscript 0.55]channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and velocity enhancements in strained- Si[subscript 0.4]5Ge[subscript 0.55]channel...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2010-03-08T17:47:36Z.
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| Subjects: | |
| Online Access: | Get fulltext |