On Backscattering and Mobility in Nanoscale Silicon MOSFETs
The DC current-voltage characteristics of an n-channel silicon MOSFET with an effective gate length of about 60 nm are analyzed and interpreted in terms of scattering theory. The experimental results are found to be consistent with the predictions of scattering theory - the drain current is closer t...
| Main Authors: | , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2010-03-09T19:55:11Z.
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| Subjects: | |
| Online Access: | Get fulltext |