Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy

Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy

The Fröhlich coupling strength of individual GaAs nanowires is investigated by resonant micro-Raman spectroscopy measurements near the direct bandgap E[subscript g]2. Large 2LO/1LO intensities up to 5.7 are observed in an individual GaAs nanowire. A 2LO resonance profile of the GaAs nanowire agrees...

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Bibliographic Details
Main Authors: Schimek, Oliver (Author), Reich, Stephanie (Contributor), Brewster, Megan Marie (Contributor), Gradecak, Silvija (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2010-03-11T19:26:39Z.
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