Exciton-phonon coupling in individual GaAs nanowires studied using resonant Raman spectroscopy
The Fröhlich coupling strength of individual GaAs nanowires is investigated by resonant micro-Raman spectroscopy measurements near the direct bandgap E[subscript g]2. Large 2LO/1LO intensities up to 5.7 are observed in an individual GaAs nanowire. A 2LO resonance profile of the GaAs nanowire agrees...
Main Authors: | Schimek, Oliver (Author), Reich, Stephanie (Contributor), Brewster, Megan Marie (Contributor), Gradecak, Silvija (Contributor) |
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Other Authors: | Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor) |
Format: | Article |
Language: | English |
Published: |
American Physical Society,
2010-03-11T19:26:39Z.
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Subjects: | |
Online Access: | Get fulltext |
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