Resonance Raman spectroscopy in Si and C ion-implanted double-wall carbon nanotubes

Resonance Raman spectroscopy in Si and C ion-implanted double-wall carbon nanotubes

The effect of 170 keV Si and 100 keV C ion bombardment on the structure and properties of highly pure, double-wall carbon nanotubes has been investigated using resonance Raman spectroscopy. The implantations were performed at room temperature with ion doses ranging between 1×1013  ions/cm2 and 1×101...

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Bibliographic Details
Main Authors: Dresselhaus, Mildred (Contributor), Saraiva, G. D. (Author), Souza Filho, Antonio (Author), Braunstein, G. (Author), Barros, Eduardo B. (Author), Filho, J. Mendes (Author), Moreira, E. C. (Author), Fagan, S. B. (Author), Baptista, D. L. (Author), Kim, Y. A. (Author), Muramatsu, Hiroyuki (Author), Endo, M. (Author)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2010-03-16T18:15:12Z.
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