A Reconfigurable 8T Ultra-Dynamic Voltage Scalable (U-DVS) SRAM in 65 nm CMOS
In modern ICs, the trend of integrating more on-chip memories on a die has led SRAMs to account for a large fraction of total area and energy of a chip. Therefore, designing memories with dynamic voltage scaling (DVS) capability is important since significant active as well as leakage power savings...
| Main Authors: | , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2010-04-07T20:16:43Z.
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| Subjects: | |
| Online Access: | Get fulltext |