Channel engineering of SOI MOSFETs for RF applications

Channel engineering of SOI MOSFETs for RF applications

Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compare...

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Bibliographic Details
Main Authors: Keast, Craig L. (Contributor), Wyatt, Peter W. (Contributor), Healey, Paul D. (Contributor), Yost, Donna-Ruth W. (Contributor), Gouker, Pascale M. (Contributor), Chen, Chenson K. (Contributor), Kedzierski, Jakub T. (Contributor), Knecht, Jeffrey M. (Contributor), Chen, Chang-Lee (Contributor)
Other Authors: Lincoln Laboratory (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2010-04-23T15:18:52Z.
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Summary:Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has no body and drain-extension implants.
Defense Advanced Research Projects Agency (Air Force Contract FA8721-05-C-0002)

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