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|a dc
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|a Keast, Craig L.
|e author
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|a Lincoln Laboratory
|e contributor
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|a Chen, Chang-Lee
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|a Keast, Craig L.
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|a Wyatt, Peter W.
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|a Healey, Paul D.
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|a Yost, Donna-Ruth W.
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|a Gouker, Pascale M.
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|a Chen, Chenson K.
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|a Kedzierski, Jakub T.
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|a Knecht, Jeffrey M.
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|a Chen, Chang-Lee
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|a Wyatt, Peter W.
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|a Healey, Paul D.
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|a Yost, Donna-Ruth W.
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|a Gouker, Pascale M.
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|a Chen, Chenson K.
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|a Kedzierski, Jakub T.
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|a Knecht, Jeffrey M.
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|a Chen, Chang-Lee
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|a Channel engineering of SOI MOSFETs for RF applications
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|b Institute of Electrical and Electronics Engineers,
|c 2010-04-23T15:18:52Z.
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| 856 |
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|z Get fulltext
|u http://hdl.handle.net/1721.1/53745
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|a Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has no body and drain-extension implants.
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|a Defense Advanced Research Projects Agency (Air Force Contract FA8721-05-C-0002)
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|a en_US
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|a Article
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|t 2009 IEEE International SOI Conference
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