Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition
Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliate...
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2010-06-02T18:08:31Z.
|
| Subjects: | |
| Online Access: | Get fulltext |