A Low Temperature Fully Lithographic Process For Metal-Oxide Field-Effect Transistors

A Low Temperature Fully Lithographic Process For Metal-Oxide Field-Effect Transistors

We report a low temperature ( ~ 100à °C) lithographic method for fabricating hybrid metal oxide/organic field-effect transistors (FETs) that combine a zinc-indium-oxide (ZIO) semiconductor channel and organic, parylene, dielectric layer. The transistors show a field-effect mobility of (12à ±0....

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Bibliographic Details
Main Authors: Sodini, Charles G. (Contributor), Bulovic, Vladimir (Contributor), Akinwande, Akintunde Ibitayo (Contributor), Wang, Annie I. (Contributor), Yaglioglu, Burag (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2010-09-28T13:44:52Z.
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