Understanding tunneling magnetoresistance during thermal annealing in MgO-based junctions with CoFeB electrodes

Understanding tunneling magnetoresistance during thermal annealing in MgO-based junctions with CoFeB electrodes

The competition between the interface crystallization and diffusion processes, their influence on the onset of symmetry-filtering coherent tunneling of Δ1 band electrons in the MgO-based magnetic tunnel junctions is investigated. Systematic study of the transport and magnetoresistance during thermal...

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Main Authors: Ni, C. (Author), Wang, W. G. (Author), Weiland, C. (Author), Shah, L. R. (Author), Fan, X. (Author), Parson, P. (Author), Miao, Guoxing (Contributor), Jordan-Sweet, J. (Author), Kou, X. M. (Author), Zhang, Y. P. (Author), Stearrett, R. (Author), Nowak, E. R. (Author), Opila, R. (Author), Moodera, Jagadeesh (Contributor), Xiao, J. Q. (Author)
Other Authors: Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology) (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2010-09-30T14:35:58Z.
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