Heavy-ion-induced digital single event transients in a 180 nm fully depleted SOI process
Heavy-ion-induced single events transients (SETs) in advanced digital circuits are a significant reliability issue for space-based systems. SET pulse widths in silicon-on-insulator (SOI) technologies are often significantly shorter than those in comparable bulk technologies. In this paper, heavy-ion...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2010-10-15T15:01:51Z.
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| Subjects: | |
| Online Access: | Get fulltext |