High electron mobility germanium MOSFETs: Effect of n-type channel implants and ozone surface passivation
Germanium n-channel devices have historically shown poor performance due to an asy mmetric distribution of interface st ates that degrade electrostatic behavior and carrier mobility. In this study we demonstrate two methods for improving the performance of Ge nFETs, ozone surface passivation and nty...
| Main Authors: | , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2010-10-15T15:37:20Z.
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| Subjects: | |
| Online Access: | Get fulltext |