Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

We used depth-resolved microcathodoluminescence spectroscopy (DRCLS) and Kelvin probe force microscopy (KPFM) to measure and map the temperature distribution and defect generation inside state-of-the-art AlGaN/GaN-based high electron mobility transistors (HEMTs) on a scale of tens of nanometers duri...

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Bibliographic Details
Main Authors:	Lin, Chung-Han (Author), Merz, T. A. (Author), Doutt, D. R. (Author), Hetzer, M. J. (Author), Joh, Jungwoo (Contributor), del Alamo, Jesus A. (Contributor), Mishra, U. K. (Author), Brillson, L. J. (Author)
Other Authors:	Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format:	Article
Language:	English
Published:	American Institute of Physics, 2010-10-20T12:19:55Z.
Subjects:	Article
Online Access:	Get fulltext

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