A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineere...

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Bibliographic Details
Main Authors: Bulsara, Mayank (Contributor), Fitzgerald, Eugene A. (Contributor), LaRoche, J. R. (Author), Kazior, T. E. (Author), Lubyshev, D. (Author), Fastenau, J. M. (Author), Liu, W. K. (Author), Urteaga, M. (Author), Ha, W. (Author), Bergman, J. (Author), Choe, M. J. (Author), Smith, D. (Author), Clark, D. (Author), Thompson, R. (Author), Drazek, C. (Author), Daval, N. (Author), Benaissa, L. (Author), Augendre, E. (Author)
Other Authors: MIT Materials Research Laboratory (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2010-10-20T20:11:08Z.
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