Modeling frequency response of 65 nm CMOS RF power devices

Modeling frequency response of 65 nm CMOS RF power devices

This paper presents a model for the frequency response of 65 nm RF power CMOS devices as a function of device width. We find that the cut-off frequency (f[subscript T]) and maximum oscillation frequency (f[subscript max]) decrease with increasing device width. Small-signal equivalent circuit extract...

Full description

Bibliographic Details
Main Authors: Gogineni, Usha (Contributor), del Alamo, Jesus A. (Contributor), Putnam, Christopher (Author), Greenberg, David (Author)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: 2010-11-04T15:02:06Z.
Subjects:
Article
Online Access:Get fulltext
Description
Summary:This paper presents a model for the frequency response of 65 nm RF power CMOS devices as a function of device width. We find that the cut-off frequency (f[subscript T]) and maximum oscillation frequency (f[subscript max]) decrease with increasing device width. Small-signal equivalent circuit extractions reveal that the main reason for the degradation in f[subscript T] and f[subscript max] is the presence of non-scalable parasitic resistances in the gate and drain of wide devices. Simplified expressions for f[subscript T] and f[subscript max] that include these parasitic effects have been derived and shown to be very accurate.

Similar Items