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|a Gogineni, Usha
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|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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|a del Alamo, Jesus A.
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|a Gogineni, Usha
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|a del Alamo, Jesus A.
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|a del Alamo, Jesus A.
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|a Putnam, Christopher
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|a Greenberg, David
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|a Modeling frequency response of 65 nm CMOS RF power devices
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|c 2010-11-04T15:02:06Z.
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|u http://hdl.handle.net/1721.1/59812
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|a This paper presents a model for the frequency response of 65 nm RF power CMOS devices as a function of device width. We find that the cut-off frequency (f[subscript T]) and maximum oscillation frequency (f[subscript max]) decrease with increasing device width. Small-signal equivalent circuit extractions reveal that the main reason for the degradation in f[subscript T] and f[subscript max] is the presence of non-scalable parasitic resistances in the gate and drain of wide devices. Simplified expressions for f[subscript T] and f[subscript max] that include these parasitic effects have been derived and shown to be very accurate.
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