Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration

Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration

Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposi...

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Bibliographic Details
Main Authors: Kimerling, Lionel C. (Contributor), McComber, Kevin A. (Contributor), Lui, Jifeng (Author), Michel, Jurgen (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Liu, Jifeng (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2010-11-17T15:37:25Z.
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