1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge
The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as...
Main Authors: | , , , , , , , , , , , |
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Other Authors: | , , |
Format: | Article |
Language: | English |
Published: |
Institute of Electrical and Electronics Engineers,
2010-12-02T17:53:33Z.
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Subjects: | |
Online Access: | Get fulltext |