Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a s...
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society,
2011-01-31T13:12:19Z.
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| Subjects: | |
| Online Access: | Get fulltext |