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|a Taychatanapat, Thiti
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|a Massachusetts Institute of Technology. Department of Physics
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|a Jarillo-Herrero, Pablo
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|a Taychatanapat, Thiti
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|a Jarillo-Herrero, Pablo
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|a Jarillo-Herrero, Pablo
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|a Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields
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|b American Physical Society,
|c 2011-01-31T13:12:19Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/60864
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|a We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a strong nonlinear behavior in the transport characteristics. The effective transport gap is typically 2 orders of magnitude smaller than the optical band gaps reported by infrared spectroscopy studies. Detailed temperature dependence measurements shed light on the different transport mechanisms in different temperature regimes.
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|a United States. Office of Naval Research (MURI)
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|a National Science Foundation (U.S.)
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|a en_US
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|a Article
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|t Physical Review Letters
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