Measurement results for an x-ray 3D-integrated active pixel sensor

We have developed a hybrid Active Pixel Sensor for detecting low energy X-rays. The sensor consists of a silicon diode detector array built on a high resistivity wafer and an SOI CMOS readout circuit, connected together by means of unique 3D integration technology developed at MIT Lincoln Laboratory...

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Main Authors: Prigozhin, Gregory (Contributor), Foster, Richard F. (Contributor), Suntharalingam, Vyshnavi (Contributor), Kissel, Steve E. (Contributor), La Marr, Beverly J. (Contributor), Bautz, Marshall W. (Contributor)
Other Authors: Lincoln Laboratory (Contributor), MIT Kavli Institute for Astrophysics and Space Research (Contributor)
Format: Article
Language:English
Published: SPIE, 2011-02-14T15:06:20Z.
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042 |a dc 
100 1 0 |a Prigozhin, Gregory  |e author 
100 1 0 |a Lincoln Laboratory  |e contributor 
100 1 0 |a MIT Kavli Institute for Astrophysics and Space Research  |e contributor 
100 1 0 |a Prigozhin, Gregory  |e contributor 
100 1 0 |a Prigozhin, Gregory  |e contributor 
100 1 0 |a Foster, Richard F.  |e contributor 
100 1 0 |a Suntharalingam, Vyshnavi  |e contributor 
100 1 0 |a Kissel, Steve E.  |e contributor 
100 1 0 |a La Marr, Beverly J.  |e contributor 
100 1 0 |a Bautz, Marshall W.  |e contributor 
700 1 0 |a Foster, Richard F.  |e author 
700 1 0 |a Suntharalingam, Vyshnavi  |e author 
700 1 0 |a Kissel, Steve E.  |e author 
700 1 0 |a La Marr, Beverly J.  |e author 
700 1 0 |a Bautz, Marshall W.  |e author 
245 0 0 |a Measurement results for an x-ray 3D-integrated active pixel sensor 
260 |b SPIE,   |c 2011-02-14T15:06:20Z. 
856 |z Get fulltext  |u http://hdl.handle.net/1721.1/60939 
520 |a We have developed a hybrid Active Pixel Sensor for detecting low energy X-rays. The sensor consists of a silicon diode detector array built on a high resistivity wafer and an SOI CMOS readout circuit, connected together by means of unique 3D integration technology developed at MIT Lincoln Laboratory. In this paper we will describe measurements of sense node capacitance and device depletion depth along with corresponding simulations aimed to optimize device performance. We also describe race condition in the column decoder and identify ways to eliminate it in order to reduce fixed pattern noise. 
520 |a United States. National Aeronautics and Space Administration (NASA) (Grant NNG06WC08G) 
546 |a en_US 
655 7 |a Article 
773 |t Proceedings of SPIE--the International Society for Optical Engineering