A Ge-on-Si laser for electronic-photonic integration

A Ge-on-Si laser for electronic-photonic integration

We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects and communications.

Bibliographic Details
Main Authors: Sun, Xiaochen (Contributor), Liu, Jifeng (Contributor), Kimerling, Lionel C. (Contributor), Michel, Jurgen (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2011-03-11T15:58:49Z.
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