Toward a Germanium Laser for Integrated Silicon Photonics
It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discu...
| Main Authors: | , , , |
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| Other Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers,
2011-04-07T20:41:46Z.
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| Subjects: | |
| Online Access: | Get fulltext |