Toward a Germanium Laser for Integrated Silicon Photonics

Toward a Germanium Laser for Integrated Silicon Photonics

It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discu...

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Bibliographic Details
Main Authors: Sun, Xiaochen (Contributor), Liu, Jifeng (Contributor), Kimerling, Lionel C. (Contributor), Michel, Jurgen (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2011-04-07T20:41:46Z.
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Summary:It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discuss the effect of strain, doping, and temperature on the direct-gap optical gain in germanium. For electrically pumped devices, properties and design guidelines of Ge/Si heterojunction are also analyzed and compared with the results from fabricated Ge/Si heterojunction LEDs.
United States. Air Force Office of Scientific Research (Silicon-Based Laser Initiative of the Multidisciplinary University Research Initiative (MURI))

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