Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering
The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO[subscript 2], is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freesta...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society,
2011-05-19T13:31:11Z.
|
| Subjects: | |
| Online Access: | Get fulltext |