Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs
The hole mobility characteristics of 〈110〉 /(100)-oriented asymmetrically strained-SiGe p-MOSFETs are studied. Uniaxial mechanical strain is applied to biaxial compressive strained devices and the relative change in effective hole mobility is measured. The channel Ge content varies from 0 to 100%. U...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2012-02-03T19:05:52Z.
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| Subjects: | |
| Online Access: | Get fulltext |