Influence of interface sink strength on the reduction of radiation-induced defect concentrations and fluxes in materials with large interface area per unit volume

We use a reaction-diffusion model to demonstrate that buried interfaces in polycrystalline composites simultaneously reduce both the concentrations and the fluxes of radiation-induced defects. The steady-state radiation-induced defect concentrations, however, are highly sensitive to the interface si...

Full description

Bibliographic Details
Main Authors: Hoagland, R. G. (Author), Uberuaga, B. P. (Author), Misra, Amit (Author), Demkowicz, Michael J. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: American Physical Society (APS), 2012-02-17T18:17:27Z.
Subjects:
Online Access:Get fulltext