The prospects for 10 nm III-V CMOS
The increasing difficulties for further scaling down of Si CMOS is bringing to the fore the investigation of alternative channel materials. Among these, III-V compound semiconductors are very attractive due to their outstanding electron transport properties. This paper briefly reviews the prospects...
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Format: | Article |
Language: | English |
Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2012-07-11T15:25:24Z.
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Subjects: | |
Online Access: | Get fulltext |
Summary: | The increasing difficulties for further scaling down of Si CMOS is bringing to the fore the investigation of alternative channel materials. Among these, III-V compound semiconductors are very attractive due to their outstanding electron transport properties. This paper briefly reviews the prospects and the challenges for a III-V CMOS technology with gate lengths in the 10 nm range. Semiconductor Research Corporation Intel Corporation |
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