The prospects for 10 nm III-V CMOS
The increasing difficulties for further scaling down of Si CMOS is bringing to the fore the investigation of alternative channel materials. Among these, III-V compound semiconductors are very attractive due to their outstanding electron transport properties. This paper briefly reviews the prospects...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2012-07-11T15:25:24Z.
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| Subjects: | |
| Online Access: | Get fulltext |